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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF6409/D NPN Silicon RF Power Transistor The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. * To be used in Class AB * Specified 26 Volts, 960 MHz Characteristics Output Power -- 20 Watts CW Gain -- 11 dB Typ Efficiency -- 60% Typ MRF6409 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319-07, STYLE 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VCEO VCES VEBO IC PD Tstg TJ Characteristic Thermal Resistance, Junction to Case (1) Symbol RJC Symbol Min Typ Value 24 55 4.0 5.0 45 0.26 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Max 3.8 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IB = 5.0 mAdc, IC =0) Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector-Cutoff Current (VCE = 30 Vdc, VBE = 0) V(BR)CEO V(BR)EBO V(BR)CES ICES 24 4.0 55 -- 30 5.0 60 -- -- -- -- 6.0 Vdc Vdc Vdc mA (1) Thermal resistance is determined under specified RF operating condition. (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRF6409 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 35 80 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) Cob -- 18 -- pF FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) Collector Efficiency (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Gpe No Degradation in Output Power 10 50 11 60 -- -- dB % T1 + C8 C7 C6 - R2 D2 D1 C9 R1 C3 B1 RF INPUT C1 D.U.T. C2 C4 C5 RF OUTPUT R3 P1 B2 C10 C11 + 26 V - 5.0 V B1, B2 C1 C2, C3 C4 C5 C6, C9 C7, C10 C8 Ferrite Bead 3.3 pF, Chip Capacitor, High Q 4.7 pF, Chip Capacitor, High Q 2.2 pF, Chip Capacitor, High Q 82 pF, Chip Capacitor, High Q 330 pF, Chip Capacitor, High Q 0.1 F, Chip Capacitor 22 F, 16 V, Tantalum Capacitor C11 D1, D2 P1 R1 R2 R3 T1 Board 4.7 F, 50 V, Tantalum Capacitor Diode BAS16 Type or Equivalent 1.0 k, Trimmer 3.3 , Chip Resistor 68 , Chip Resistor 2.2 k, Resistor NPN Transistor Glass Teflon(R), r = 2.55, H = 1/50 inch Figure 1. Test Circuit Electrical Schematic MRF6409 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 30 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 25 20 15 10 5.0 0 0 VCE = 26 V IQ = 50 mA f = 960 MHz 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 25 24 23 22 21 20 19 18 17 16 15 920 930 940 950 VCE = 26 V IQ = 50 mA Pin = 1 W 960 970 Pin, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power (CW) Figure 3. Output Power versus Frequency (CW) 30 P , OUTPUT POWER (WATTS) out P , OUTPUT POWER (WATTS) out 25 20 15 10 5.0 0 IQ = 50 mA f = 960 MHz Pin = 1, 6 W 18 20 22 24 26 13 12 11 10 9.0 8.0 7.0 0 IQ = 50 mA f = 960 MHz 5.0 10 15 20 25 30 70% 60% 50% 40% 30% 20% 10% 35 , COLLECTOR EFFICIENCY (%) VCE, SUPPLY VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) Figure 4. Output Power versus Supply Voltage (CW) Figure 5. Power Gain and Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 13 12.5 Gp , POWER GAIN (dB) 12 11.5 11 10.5 10 9.5 9.0 910 920 930 940 950 VCE = 26 V IQ = 50 mA 960 65% , COLLECTOR EFFICIENCY (%) 0 -10 -20 -30 -40 -50 -60 VCE = 26 V ICQ = 50 mA f1 = 960 MHz f2 = 960, 1 MHz 60% 55% 50% 45% 970 0.1 1.0 Pout, OUTPUT POWER (WATTS) PEP 10 f, FREQUENCY (MHz) Figure 6. Typical Broadband Performances Figure 7. Intermodulation Distortion versus Output Power MOTOROLA RF DEVICE DATA MRF6409 3 f = 980 MHz Zin 920 Zo = 10 920 ZOL* f = 980 MHz f (MHz) 920 940 960 980 Zin () 1.4 + j3.0 1.5 + j3.9 1.5 + j4.2 1.6 + j4.4 ZOL* () 3.2 - j2.5 3.5 - j1.88 3.9 - j2.5 4.0 - j2.8 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW) MRF6409 4 MOTOROLA RF DEVICE DATA Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/D) C8 C6 C7 B R2 R1 C3 B1 C1 C2 C4 C5 B2 C9 C10 C11 Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1 and Components Location (Reduced 25% in printed data book, DL110/D) MOTOROLA RF DEVICE DATA MRF6409 5 PACKAGE DIMENSIONS IDENTIFICATION NOTCH 6 -AL 5 4 Q 2 PL 0.15 (0.006) M TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M DIM A B C D E F H J K L N Q STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) CASE 319-07 ISSUE M Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://sps.motorola.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF6409 6 MRF6409/D MOTOROLA RF DEVICE DATA |
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